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Electrical characterization of a He ion implantation-induced deep level existing in p+ n InP junctions.

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Title: Electrical characterization of a He ion implantation-induced deep level existing in p+ n InP junctions.
Authors: Quintanilla, L., Pinacho, R., Enriquez, L.
Source: Journal of Applied Physics; June 1 1999, Vol. 85 Issue 11, p7978-7980, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500538494
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Electrical characterization of a He ion implantation-induced deep level existing in p+ n InP junctions.
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  Data: <searchLink fieldCode="AU" term="%22Quintanilla%2C+L%2E%22">Quintanilla, L.</searchLink><br /><searchLink fieldCode="AU" term="%22Pinacho%2C+R%2E%22">Pinacho, R.</searchLink><br /><searchLink fieldCode="AU" term="%22Enriquez%2C+L%2E%22">Enriquez, L.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; June 1 1999, Vol. 85 Issue 11, p7978-7980, 3p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.369388
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 7978
    Titles:
      – TitleFull: Electrical characterization of a He ion implantation-induced deep level existing in p+ n InP junctions.
        Type: main
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            NameFull: Quintanilla, L.
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            NameFull: Pinacho, R.
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            NameFull: Enriquez, L.
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            – D: 01
              M: 06
              Text: June 1 1999
              Type: published
              Y: 1999
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              Value: 85
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              Value: 11
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