View in EDS

The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295K.

Saved in:
Bibliographic Details
Title: The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295K.
Authors: Varykin, N., Cho, C. R., Rozgonyi, G. A.
Source: Applied Physics Letters; July 12 1999, Vol. 75 Issue 2, p241-243, 3p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500557871
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295K.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Varykin%2C+N%2E%22">Varykin, N.</searchLink><br /><searchLink fieldCode="AU" term="%22Cho%2C+C%2E+R%2E%22">Cho, C. R.</searchLink><br /><searchLink fieldCode="AU" term="%22Rozgonyi%2C+G%2E+A%2E%22">Rozgonyi, G. A.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; July 12 1999, Vol. 75 Issue 2, p241-243, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500557871
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.124335
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 241
    Titles:
      – TitleFull: The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295K.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Varykin, N.
      – PersonEntity:
          Name:
            NameFull: Cho, C. R.
      – PersonEntity:
          Name:
            NameFull: Rozgonyi, G. A.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 12
              M: 07
              Text: July 12 1999
              Type: published
              Y: 1999
          Identifiers:
            – Type: issn-print
              Value: 00036951
          Numbering:
            – Type: volume
              Value: 75
            – Type: issue
              Value: 2
          Titles:
            – TitleFull: Applied Physics Letters
              Type: main
ResultId 1