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Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system.

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Bibliographic Details
Title: Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system.
Authors: Bocchi, C., Franchi, S., Germini, F.
Source: Journal of Applied Physics; August 1 1999, Vol. 86 Issue 3, p1298-1305, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500564012
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system.
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  Data: <searchLink fieldCode="AU" term="%22Bocchi%2C+C%2E%22">Bocchi, C.</searchLink><br /><searchLink fieldCode="AU" term="%22Franchi%2C+S%2E%22">Franchi, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Germini%2C+F%2E%22">Germini, F.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; August 1 1999, Vol. 86 Issue 3, p1298-1305, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500564012
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.370885
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 1298
    Titles:
      – TitleFull: Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system.
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            NameFull: Bocchi, C.
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            NameFull: Franchi, S.
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            NameFull: Germini, F.
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            – D: 01
              M: 08
              Text: August 1 1999
              Type: published
              Y: 1999
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              Value: 86
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            – TitleFull: Journal of Applied Physics
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