APA (7th ed.) Citation

Bonafos, C., Mathiot, D., & Claverie, A. (1998). Ostwald ripening of end-of-range defects in silicon. Journal of Applied Physics, 83(6), 3008. https://doi.org/10.1063/1.367056

Chicago Style (17th ed.) Citation

Bonafos, C., D. Mathiot, and A. Claverie. "Ostwald Ripening of End-of-range Defects in Silicon." Journal of Applied Physics 83, no. 6 (1998): 3008. https://doi.org/10.1063/1.367056.

MLA (9th ed.) Citation

Bonafos, C., et al. "Ostwald Ripening of End-of-range Defects in Silicon." Journal of Applied Physics, vol. 83, no. 6, 1998, p. 3008, https://doi.org/10.1063/1.367056.