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Ostwald ripening of end-of-range defects in silicon.

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Title: Ostwald ripening of end-of-range defects in silicon.
Authors: Bonafos, C., Mathiot, D., Claverie, A.
Source: Journal of Applied Physics; March 15 1998, Vol. 83 Issue 6, p3008-3017, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500581466
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Ostwald ripening of end-of-range defects in silicon.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500581466
RecordInfo BibRecord:
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        Value: 10.1063/1.367056
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 3008
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      – TitleFull: Ostwald ripening of end-of-range defects in silicon.
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            NameFull: Bonafos, C.
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            NameFull: Mathiot, D.
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            NameFull: Claverie, A.
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              Text: March 15 1998
              Type: published
              Y: 1998
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              Value: 83
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