Ostwald ripening of end-of-range defects in silicon.
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| Title: | Ostwald ripening of end-of-range defects in silicon. |
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| Authors: | Bonafos, C., Mathiot, D., Claverie, A. |
| Source: | Journal of Applied Physics; March 15 1998, Vol. 83 Issue 6, p3008-3017, 10p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.367056 |
