APA (7th ed.) Citation

Quintanilla, L., Pinacho, R., & Enriquez, L. (1999). Electrical characterization of He-ion implantation-induced deep levels in p+ n InP junctions. Journal of Applied Physics, 86(9), 4855. https://doi.org/10.1063/1.371452

Chicago Style (17th ed.) Citation

Quintanilla, L., R. Pinacho, and L. Enriquez. "Electrical Characterization of He-ion Implantation-induced Deep Levels in P+ N InP Junctions." Journal of Applied Physics 86, no. 9 (1999): 4855. https://doi.org/10.1063/1.371452.

MLA (9th ed.) Citation

Quintanilla, L., et al. "Electrical Characterization of He-ion Implantation-induced Deep Levels in P+ N InP Junctions." Journal of Applied Physics, vol. 86, no. 9, 1999, p. 4855, https://doi.org/10.1063/1.371452.