View in EDS

Electrical characterization of He-ion implantation-induced deep levels in p+ n InP junctions.

Saved in:
Bibliographic Details
Title: Electrical characterization of He-ion implantation-induced deep levels in p+ n InP junctions.
Authors: Quintanilla, L., Pinacho, R., Enriquez, L.
Source: Journal of Applied Physics; November 1 1999, Vol. 86 Issue 9, p4855-4860, 6p
Database: Applied Science & Technology Source
Be the first to leave a comment!
You must be logged in first