APA (7th ed.) Citation

Beyer, R., Burghardt, H., & Thurzo, I. (2000). A deconvolution of the transient response of (100) Si/SiO2 semiconductor-insulator interface states according to small pulse excitation: Evidence of different branches of charge transition. Solid-State Electronics, 44(8), 1463. https://doi.org/10.1016/S0038-1101(00)00064-2

Chicago Style (17th ed.) Citation

Beyer, R., H. Burghardt, and I. Thurzo. "A Deconvolution of the Transient Response of (100) Si/SiO2 Semiconductor-insulator Interface States According to Small Pulse Excitation: Evidence of Different Branches of Charge Transition." Solid-State Electronics 44, no. 8 (2000): 1463. https://doi.org/10.1016/S0038-1101(00)00064-2.

MLA (9th ed.) Citation

Beyer, R., et al. "A Deconvolution of the Transient Response of (100) Si/SiO2 Semiconductor-insulator Interface States According to Small Pulse Excitation: Evidence of Different Branches of Charge Transition." Solid-State Electronics, vol. 44, no. 8, 2000, p. 1463, https://doi.org/10.1016/S0038-1101(00)00064-2.