A deconvolution of the transient response of (100) Si/SiO2 semiconductor-insulator interface states according to small pulse excitation: evidence of different branches of charge transition.
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| Title: | A deconvolution of the transient response of (100) Si/SiO2 semiconductor-insulator interface states according to small pulse excitation: evidence of different branches of charge transition. |
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| Authors: | Beyer, R., Burghardt, H., Thurzo, I. |
| Source: | Solid-State Electronics; August 2000, Vol. 44 Issue 8, p1463-1470, 8p |
| Database: | Applied Science & Technology Source |
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