APA (7th ed.) Citation

John, S., Quinones, E. J., & Ferguson, B. (1999). Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition. Journal of the Electrochemical Society, 146(12), 4611.

Chicago Style (17th ed.) Citation

John, S., E. J. Quinones, and B. Ferguson. "Properties of Si1-x-yGexCy Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition." Journal of the Electrochemical Society 146, no. 12 (1999): 4611.

MLA (9th ed.) Citation

John, S., et al. "Properties of Si1-x-yGexCy Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition." Journal of the Electrochemical Society, vol. 146, no. 12, 1999, p. 4611.