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Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition.

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Bibliographic Details
Title: Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition.
Authors: John, S., Quinones, E. J., Ferguson, B.
Source: Journal of the Electrochemical Society; December 1999, Vol. 146 Issue 12, p4611-4618, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500611068
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+the+Electrochemical+Society%22">Journal of the Electrochemical Society</searchLink>; December 1999, Vol. 146 Issue 12, p4611-4618, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500611068
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      – Code: eng
        Text: English
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        StartPage: 4611
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      – TitleFull: Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition.
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            NameFull: John, S.
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            NameFull: Quinones, E. J.
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            NameFull: Ferguson, B.
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              M: 12
              Text: December 1999
              Type: published
              Y: 1999
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              Value: 146
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