Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition.
Saved in:
| Title: | Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition. |
|---|---|
| Authors: | John, S., Quinones, E. J., Ferguson, B. |
| Source: | Journal of the Electrochemical Society; December 1999, Vol. 146 Issue 12, p4611-4618, 8p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00134651 |
|---|
