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Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition.

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Bibliographic Details
Title: Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition.
Authors: John, S., Quinones, E. J., Ferguson, B.
Source: Journal of the Electrochemical Society; December 1999, Vol. 146 Issue 12, p4611-4618, 8p
Database: Applied Science & Technology Source
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