APA (7th ed.) Citation

Han, A. C., Wojtowicz, M., & Block, T. R. (1999). Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence. Journal of Applied Physics, 86(11), 6160. https://doi.org/10.1063/1.371669

Chicago Style (17th ed.) Citation

Han, A. C., M. Wojtowicz, and T. R. Block. "Characterization of GaAs/AlGaAs Heterojunction Bipolar Transistor Devices Using Photoreflectance and Photoluminescence." Journal of Applied Physics 86, no. 11 (1999): 6160. https://doi.org/10.1063/1.371669.

MLA (9th ed.) Citation

Han, A. C., et al. "Characterization of GaAs/AlGaAs Heterojunction Bipolar Transistor Devices Using Photoreflectance and Photoluminescence." Journal of Applied Physics, vol. 86, no. 11, 1999, p. 6160, https://doi.org/10.1063/1.371669.