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Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence.

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Bibliographic Details
Title: Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence.
Authors: Han, A. C., Wojtowicz, M., Block, T. R.
Source: Journal of Applied Physics; December 1 1999, Vol. 86 Issue 11, p6160-6163, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500612318
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence.
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  Data: <searchLink fieldCode="AU" term="%22Han%2C+A%2E+C%2E%22">Han, A. C.</searchLink><br /><searchLink fieldCode="AU" term="%22Wojtowicz%2C+M%2E%22">Wojtowicz, M.</searchLink><br /><searchLink fieldCode="AU" term="%22Block%2C+T%2E+R%2E%22">Block, T. R.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; December 1 1999, Vol. 86 Issue 11, p6160-6163, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500612318
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.371669
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 6160
    Titles:
      – TitleFull: Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence.
        Type: main
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            NameFull: Han, A. C.
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            NameFull: Wojtowicz, M.
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            NameFull: Block, T. R.
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            – D: 01
              M: 12
              Text: December 1 1999
              Type: published
              Y: 1999
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              Value: 86
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              Value: 11
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            – TitleFull: Journal of Applied Physics
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