APA (7th ed.) Citation

Ang, C. H., Ling, C. H., & Cheng, Z. Y. (2000). Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide. Journal of Applied Physics, 88(5), 2872. https://doi.org/10.1063/1.1288169

Chicago Style (17th ed.) Citation

Ang, C. H., C. H. Ling, and Z. Y. Cheng. "Origin of Temperature-sensitive Hole Current at Low Gate Voltage Regime in Ultrathin Gate Oxide." Journal of Applied Physics 88, no. 5 (2000): 2872. https://doi.org/10.1063/1.1288169.

MLA (9th ed.) Citation

Ang, C. H., et al. "Origin of Temperature-sensitive Hole Current at Low Gate Voltage Regime in Ultrathin Gate Oxide." Journal of Applied Physics, vol. 88, no. 5, 2000, p. 2872, https://doi.org/10.1063/1.1288169.