Transport model in n++-poly/SiOx/SiO2p-sub MOS capacitors for low-voltage nonvolatile memory applications.

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Bibliographic Details
Title: Transport model in n++-poly/SiOx/SiO2p-sub MOS capacitors for low-voltage nonvolatile memory applications.
Authors: Irrera, Fernanda, Marangelo, Luca
Source: IEEE Transactions on Electron Devices; February 2000, Vol. 47 Issue 2, p372-377, 6p
Database: Applied Science & Technology Source
Description
ISSN:00189383
DOI:10.1109/16.822283