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Transport model in n++-poly/SiOx/SiO2p-sub MOS capacitors for low-voltage nonvolatile memory applications.

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Bibliographic Details
Title: Transport model in n++-poly/SiOx/SiO2p-sub MOS capacitors for low-voltage nonvolatile memory applications.
Authors: Irrera, Fernanda, Marangelo, Luca
Source: IEEE Transactions on Electron Devices; February 2000, Vol. 47 Issue 2, p372-377, 6p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 500645946
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PubType: Academic Journal
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  Data: Transport model in n++-poly/SiOx/SiO2p-sub MOS capacitors for low-voltage nonvolatile memory applications.
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  Data: <searchLink fieldCode="AU" term="%22Irrera%2C+Fernanda%22">Irrera, Fernanda</searchLink><br /><searchLink fieldCode="AU" term="%22Marangelo%2C+Luca%22">Marangelo, Luca</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; February 2000, Vol. 47 Issue 2, p372-377, 6p
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        Value: 10.1109/16.822283
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      – Code: eng
        Text: English
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      – TitleFull: Transport model in n++-poly/SiOx/SiO2p-sub MOS capacitors for low-voltage nonvolatile memory applications.
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            NameFull: Irrera, Fernanda
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            NameFull: Marangelo, Luca
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              Text: February 2000
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              Y: 2000
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