APA (7th ed.) Citation

Ortiz, C., Mathiot, D., & Dubois, C. (2000). Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient. Journal of Applied Physics, 87(5), 2661. https://doi.org/10.1063/1.372236

Chicago Style (17th ed.) Citation

Ortiz, Ch, D. Mathiot, and Ch Dubois. "Diffusion of Low-dose Implanted Aluminum in Silicon in Inert and Dry O2 Ambient." Journal of Applied Physics 87, no. 5 (2000): 2661. https://doi.org/10.1063/1.372236.

MLA (9th ed.) Citation

Ortiz, Ch, et al. "Diffusion of Low-dose Implanted Aluminum in Silicon in Inert and Dry O2 Ambient." Journal of Applied Physics, vol. 87, no. 5, 2000, p. 2661, https://doi.org/10.1063/1.372236.