Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient.
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| Title: | Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient. |
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| Authors: | Ortiz, Ch, Mathiot, D., Dubois, Ch |
| Source: | Journal of Applied Physics; March 1 2000, Vol. 87 Issue 5, p2661-2663, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.372236 |
