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Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient.

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Bibliographic Details
Title: Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient.
Authors: Ortiz, Ch, Mathiot, D., Dubois, Ch
Source: Journal of Applied Physics; March 1 2000, Vol. 87 Issue 5, p2661-2663, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500654930
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient.
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  Data: <searchLink fieldCode="AU" term="%22Ortiz%2C+Ch%22">Ortiz, Ch</searchLink><br /><searchLink fieldCode="AU" term="%22Mathiot%2C+D%2E%22">Mathiot, D.</searchLink><br /><searchLink fieldCode="AU" term="%22Dubois%2C+Ch%22">Dubois, Ch</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; March 1 2000, Vol. 87 Issue 5, p2661-2663, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500654930
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.372236
    Languages:
      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 2661
    Titles:
      – TitleFull: Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient.
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          Name:
            NameFull: Ortiz, Ch
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            NameFull: Mathiot, D.
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            NameFull: Dubois, Ch
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            – D: 01
              M: 03
              Text: March 1 2000
              Type: published
              Y: 2000
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              Value: 87
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              Value: 5
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            – TitleFull: Journal of Applied Physics
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