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Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient.

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Bibliographic Details
Title: Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient.
Authors: Ortiz, Ch, Mathiot, D., Dubois, Ch
Source: Journal of Applied Physics; March 1 2000, Vol. 87 Issue 5, p2661-2663, 3p
Database: Applied Science & Technology Source
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