Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases.

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Title: Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases.
Authors: Hsin, Y. M., Asbeck, P. M.
Source: Solid-State Electronics; April 2000, Vol. 44 Issue 4, p587-592, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500665131
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; April 2000, Vol. 44 Issue 4, p587-592, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500665131
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/S0038-1101(99)00294-4
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 587
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      – TitleFull: Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases.
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            NameFull: Hsin, Y. M.
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            NameFull: Asbeck, P. M.
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              Text: April 2000
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              Y: 2000
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              Value: 44
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            – TitleFull: Solid-State Electronics
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