Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition.

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Bibliographic Details
Title: Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition.
Authors: Ahrenkiel, R. K., Johnston, S. W., Keyes, B. M.
Source: Applied Physics Letters; 7/17/2000, Vol. 77 Issue 3, p3794-3796, 3p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.1328774