Lee, R. T., Shurtleff, J. K., & Fetzer, C. M. (2000). Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy. Journal of Applied Physics, 87(8), 3730. https://doi.org/10.1063/1.372408
Chicago Style (17th ed.) CitationLee, R. T., J. K. Shurtleff, and C. M. Fetzer. "Surfactant Controlled Growth of GaInP by Organometallic Vapor Phase Epitaxy." Journal of Applied Physics 87, no. 8 (2000): 3730. https://doi.org/10.1063/1.372408.
MLA (9th ed.) CitationLee, R. T., et al. "Surfactant Controlled Growth of GaInP by Organometallic Vapor Phase Epitaxy." Journal of Applied Physics, vol. 87, no. 8, 2000, p. 3730, https://doi.org/10.1063/1.372408.
Warning: These citations may not always be 100% accurate.