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Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes.

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Bibliographic Details
Title: Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes.
Authors: Hierro, A., Kwon, D., Ringel, S. A.
Source: Applied Physics Letters; May 22 2000, Vol. 76 Issue 21, p3064-3066, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500690126
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; May 22 2000, Vol. 76 Issue 21, p3064-3066, 3p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.126580
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 3064
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      – TitleFull: Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes.
        Type: main
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            NameFull: Hierro, A.
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            NameFull: Kwon, D.
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              Text: May 22 2000
              Type: published
              Y: 2000
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