APA (7th ed.) Citation

Robinson, H. G., Berding, M. A., & Hamilton, W. J. (2000). Enhanced diffusion and interdiffusion in HgCdTe from Fermi-level effects. Journal of Electronic Materials, 29(6), 657. https://doi.org/10.1007/s11664-000-0201-6

Chicago Style (17th ed.) Citation

Robinson, H. G., M. A. Berding, and W. J. Hamilton. "Enhanced Diffusion and Interdiffusion in HgCdTe from Fermi-level Effects." Journal of Electronic Materials 29, no. 6 (2000): 657. https://doi.org/10.1007/s11664-000-0201-6.

MLA (9th ed.) Citation

Robinson, H. G., et al. "Enhanced Diffusion and Interdiffusion in HgCdTe from Fermi-level Effects." Journal of Electronic Materials, vol. 29, no. 6, 2000, p. 657, https://doi.org/10.1007/s11664-000-0201-6.