APA (7th ed.) Citation

Mishima, Y., Yoshino, K., & Takeuchi, F. (2001). High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates. IEEE Electron Device Letters, 22(2), 89. https://doi.org/10.1109/55.902841

Chicago Style (17th ed.) Citation

Mishima, Y., K. Yoshino, and F. Takeuchi. "High-performance CMOS Circuits Fabricated by Excimer-laser-annealed Poly-Si TFTs on Glass Substrates." IEEE Electron Device Letters 22, no. 2 (2001): 89. https://doi.org/10.1109/55.902841.

MLA (9th ed.) Citation

Mishima, Y., et al. "High-performance CMOS Circuits Fabricated by Excimer-laser-annealed Poly-Si TFTs on Glass Substrates." IEEE Electron Device Letters, vol. 22, no. 2, 2001, p. 89, https://doi.org/10.1109/55.902841.