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High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates.

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Bibliographic Details
Title: High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates.
Authors: Mishima, Y., Yoshino, K., Takeuchi, F.
Source: IEEE Electron Device Letters; February 2001, Vol. 22 Issue 2, p89-91, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500694984
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PubType: Academic Journal
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  Data: High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates.
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  Data: <searchLink fieldCode="AU" term="%22Mishima%2C+Y%2E%22">Mishima, Y.</searchLink><br /><searchLink fieldCode="AU" term="%22Yoshino%2C+K%2E%22">Yoshino, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Takeuchi%2C+F%2E%22">Takeuchi, F.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; February 2001, Vol. 22 Issue 2, p89-91, 3p
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        Value: 10.1109/55.902841
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        Text: English
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      – TitleFull: High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates.
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            NameFull: Mishima, Y.
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            NameFull: Yoshino, K.
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              Text: February 2001
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              Y: 2001
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