APA (7th ed.) Citation

Chavarkar, P., Mathis, S. K., & Zhao, L. (2000). Strain relaxation in InGaAs lattice engineered substrates. Journal of Electronic Materials, 29(7), 944. https://doi.org/10.1007/s11664-000-0186-1

Chicago Style (17th ed.) Citation

Chavarkar, P., S. K. Mathis, and L. Zhao. "Strain Relaxation in InGaAs Lattice Engineered Substrates." Journal of Electronic Materials 29, no. 7 (2000): 944. https://doi.org/10.1007/s11664-000-0186-1.

MLA (9th ed.) Citation

Chavarkar, P., et al. "Strain Relaxation in InGaAs Lattice Engineered Substrates." Journal of Electronic Materials, vol. 29, no. 7, 2000, p. 944, https://doi.org/10.1007/s11664-000-0186-1.