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Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm.

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Title: Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm.
Authors: Passaseo, A., Rinaldi, R., Longo, M.
Source: Journal of Applied Physics; April 15 2001, Vol. 89 Issue 8, p4341-4348, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500726910
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; April 15 2001, Vol. 89 Issue 8, p4341-4348, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500726910
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1351861
    Languages:
      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 4341
    Titles:
      – TitleFull: Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm.
        Type: main
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            NameFull: Passaseo, A.
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            NameFull: Rinaldi, R.
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            NameFull: Longo, M.
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            – D: 15
              M: 04
              Text: April 15 2001
              Type: published
              Y: 2001
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              Value: 89
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              Value: 8
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