APA (7th ed.) Citation

Marek, T., Kunsági-Máté, S., & Strunk, H. P. (2001). Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers. Journal of Applied Physics, 89(11), 6519. https://doi.org/10.1063/1.1352025

Chicago Style (17th ed.) Citation

Marek, T., S. Kunsági-Máté, and H. P. Strunk. "Model for the Incorporation of Excess Arsenic into Interstitial Positions During the Low-temperature Growth of GaAs(001) Layers." Journal of Applied Physics 89, no. 11 (2001): 6519. https://doi.org/10.1063/1.1352025.

MLA (9th ed.) Citation

Marek, T., et al. "Model for the Incorporation of Excess Arsenic into Interstitial Positions During the Low-temperature Growth of GaAs(001) Layers." Journal of Applied Physics, vol. 89, no. 11, 2001, p. 6519, https://doi.org/10.1063/1.1352025.