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Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers.

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Title: Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers.
Authors: Marek, T., Kunsági-Máté, S., Strunk, H. P.
Source: Journal of Applied Physics; June 1 2001 pt1, Vol. 89 Issue 11, p6519-6522, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500750630
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers.
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  Data: <searchLink fieldCode="AU" term="%22Marek%2C+T%2E%22">Marek, T.</searchLink><br /><searchLink fieldCode="AU" term="%22Kunsági-Máté%2C+S%2E%22">Kunsági-Máté, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Strunk%2C+H%2E+P%2E%22">Strunk, H. P.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; June 1 2001 pt1, Vol. 89 Issue 11, p6519-6522, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500750630
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1352025
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 6519
    Titles:
      – TitleFull: Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers.
        Type: main
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            NameFull: Marek, T.
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            NameFull: Kunsági-Máté, S.
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            NameFull: Strunk, H. P.
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            – D: 01
              M: 06
              Text: June 1 2001 pt1
              Type: published
              Y: 2001
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              Value: 89
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              Value: 11
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            – TitleFull: Journal of Applied Physics
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