Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers.
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| Title: | Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers. |
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| Authors: | Marek, T., Kunsági-Máté, S., Strunk, H. P. |
| Source: | Journal of Applied Physics; June 1 2001 pt1, Vol. 89 Issue 11, p6519-6522, 4p |
| Database: | Applied Science & Technology Source |
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