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Deep-level electron traps in vapor phase epitaxial GaAs grown with oxygen injection.

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Bibliographic Details
Title: Deep-level electron traps in vapor phase epitaxial GaAs grown with oxygen injection.
Authors: Ruby, D. S., Arai, K., Stillman, G. E.
Source: Journal of Applied Physics; July 15 1985, Vol. 58, p825-830, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500811313
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Deep-level electron traps in vapor phase epitaxial GaAs grown with oxygen injection.
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  Data: <searchLink fieldCode="AU" term="%22Ruby%2C+D%2E+S%2E%22">Ruby, D. S.</searchLink><br /><searchLink fieldCode="AU" term="%22Arai%2C+K%2E%22">Arai, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Stillman%2C+G%2E+E%2E%22">Stillman, G. E.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; July 15 1985, Vol. 58, p825-830, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500811313
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.336151
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 825
    Titles:
      – TitleFull: Deep-level electron traps in vapor phase epitaxial GaAs grown with oxygen injection.
        Type: main
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          Name:
            NameFull: Ruby, D. S.
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            NameFull: Arai, K.
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            NameFull: Stillman, G. E.
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            – D: 15
              M: 07
              Text: July 15 1985
              Type: published
              Y: 1985
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              Value: 58
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            – TitleFull: Journal of Applied Physics
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