Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors.

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Bibliographic Details
Title: Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors.
Authors: Motohisa, J., Nakajima, F., Fukui, T.
Source: Applied Physics Letters; April 15 2002, Vol. 80 Issue 15, p2797-2799, 3p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.1470246