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Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors.

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Title: Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors.
Authors: Motohisa, J., Nakajima, F., Fukui, T.
Source: Applied Physics Letters; April 15 2002, Vol. 80 Issue 15, p2797-2799, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500859532
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; April 15 2002, Vol. 80 Issue 15, p2797-2799, 3p
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        Value: 10.1063/1.1470246
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        Text: English
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      – TitleFull: Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors.
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            NameFull: Motohisa, J.
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              Text: April 15 2002
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              Y: 2002
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