Kim, J., So, H. M., & Park, J. W. (2002). Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition. Applied Physics Letters, 80(19), 3548. https://doi.org/10.1063/1.1478158
Chicago Style (17th ed.) CitationKim, Jae-Ryoung, Hye Mi So, and Jong Wan Park. "Electrical Transport Properties of Individual Gallium Nitride Nanowires Synthesized by Chemical-vapor-deposition." Applied Physics Letters 80, no. 19 (2002): 3548. https://doi.org/10.1063/1.1478158.
MLA (9th ed.) CitationKim, Jae-Ryoung, et al. "Electrical Transport Properties of Individual Gallium Nitride Nanowires Synthesized by Chemical-vapor-deposition." Applied Physics Letters, vol. 80, no. 19, 2002, p. 3548, https://doi.org/10.1063/1.1478158.