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Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition.

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Title: Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition.
Authors: Kim, Jae-Ryoung, So, Hye Mi, Park, Jong Wan
Source: Applied Physics Letters; May 13 2002, Vol. 80 Issue 19, p3548-3550, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500872859
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Group: Ti
  Data: Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition.
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  Data: <searchLink fieldCode="AU" term="%22Kim%2C+Jae-Ryoung%22">Kim, Jae-Ryoung</searchLink><br /><searchLink fieldCode="AU" term="%22So%2C+Hye+Mi%22">So, Hye Mi</searchLink><br /><searchLink fieldCode="AU" term="%22Park%2C+Jong+Wan%22">Park, Jong Wan</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; May 13 2002, Vol. 80 Issue 19, p3548-3550, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500872859
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1478158
    Languages:
      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 3548
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      – TitleFull: Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition.
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          Name:
            NameFull: Kim, Jae-Ryoung
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            NameFull: So, Hye Mi
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            NameFull: Park, Jong Wan
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            – D: 13
              M: 05
              Text: May 13 2002
              Type: published
              Y: 2002
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              Value: 80
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              Value: 19
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            – TitleFull: Applied Physics Letters
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