Effects of Annealing on the Hydrogen Concentration and the Performance of InGaP/InGaAsN/GaAs Heterojunction Bipolar Transistors.

Saved in:

Bibliographic Details
Title:	Effects of Annealing on the Hydrogen Concentration and the Performance of InGaP/InGaAsN/GaAs Heterojunction Bipolar Transistors.
Authors:	Hsin, Y. M., Hsu, H. T., Hseuh, K. P.
Source:	Journal of Electronic Materials; September 2003, Vol. 32 Issue 9, p948-951, 4p
Database:	Applied Science & Technology Source

Description
ISSN:	03615235
DOI:	10.1007/s11664-003-0228-6