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Effects of Annealing on the Hydrogen Concentration and the Performance of InGaP/InGaAsN/GaAs Heterojunction Bipolar Transistors.

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Title: Effects of Annealing on the Hydrogen Concentration and the Performance of InGaP/InGaAsN/GaAs Heterojunction Bipolar Transistors.
Authors: Hsin, Y. M., Hsu, H. T., Hseuh, K. P.
Source: Journal of Electronic Materials; September 2003, Vol. 32 Issue 9, p948-951, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500886957
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Effects of Annealing on the Hydrogen Concentration and the Performance of InGaP/InGaAsN/GaAs Heterojunction Bipolar Transistors.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; September 2003, Vol. 32 Issue 9, p948-951, 4p
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        Value: 10.1007/s11664-003-0228-6
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 948
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      – TitleFull: Effects of Annealing on the Hydrogen Concentration and the Performance of InGaP/InGaAsN/GaAs Heterojunction Bipolar Transistors.
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            NameFull: Hsin, Y. M.
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            NameFull: Hsu, H. T.
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            NameFull: Hseuh, K. P.
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              Text: September 2003
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              Y: 2003
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