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Band offset measurements of the Si3N4/GaN (0001) interface.

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Bibliographic Details
Title: Band offset measurements of the Si3N4/GaN (0001) interface.
Authors: Cook, T. E. Jr, Fulton, C. C., Mecouch, W. J.
Source: Journal of Applied Physics; September 15 2003, Vol. 94 Issue 6, p3949-3954, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500894912
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Band offset measurements of the Si3N4/GaN (0001) interface.
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  Data: <searchLink fieldCode="AU" term="%22Cook%2C+T%2E+E%2E+Jr%22">Cook, T. E. Jr</searchLink><br /><searchLink fieldCode="AU" term="%22Fulton%2C+C%2E+C%2E%22">Fulton, C. C.</searchLink><br /><searchLink fieldCode="AU" term="%22Mecouch%2C+W%2E+J%2E%22">Mecouch, W. J.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; September 15 2003, Vol. 94 Issue 6, p3949-3954, 6p
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1601314
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 3949
    Titles:
      – TitleFull: Band offset measurements of the Si3N4/GaN (0001) interface.
        Type: main
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            NameFull: Cook, T. E.
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            NameFull: Fulton, C. C.
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            NameFull: Mecouch, W. J.
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            – D: 15
              M: 09
              Text: September 15 2003
              Type: published
              Y: 2003
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              Value: 94
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              Value: 6
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            – TitleFull: Journal of Applied Physics
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