APA (7th ed.) Citation

Albrecht, M., Strunk, H. P., & Weyher, J. L. (2002). Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope. Journal of Applied Physics, 92(4), 2000. https://doi.org/10.1063/1.1490618

Chicago Style (17th ed.) Citation

Albrecht, M., H. P. Strunk, and J. L. Weyher. "Carrier Recombination at Single Dislocations in GaN Measured by Cathodoluminescence in a Transmission Electron Microscope." Journal of Applied Physics 92, no. 4 (2002): 2000. https://doi.org/10.1063/1.1490618.

MLA (9th ed.) Citation

Albrecht, M., et al. "Carrier Recombination at Single Dislocations in GaN Measured by Cathodoluminescence in a Transmission Electron Microscope." Journal of Applied Physics, vol. 92, no. 4, 2002, p. 2000, https://doi.org/10.1063/1.1490618.