Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope.
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| Title: | Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope. |
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| Authors: | Albrecht, M., Strunk, H. P., Weyher, J. L. |
| Source: | Journal of Applied Physics; August 15 2002, Vol. 92 Issue 4, p2000-2005, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.1490618 |
