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Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient.

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Title: Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient.
Authors: Spadafora, M., Privitera, G., Terrasi, A.
Source: Applied Physics Letters; November 3 2003, Vol. 83 Issue 18, p3713-3715, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500917660
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; November 3 2003, Vol. 83 Issue 18, p3713-3715, 3p
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1622439
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 3713
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      – TitleFull: Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient.
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            NameFull: Spadafora, M.
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            NameFull: Privitera, G.
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            NameFull: Terrasi, A.
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              Text: November 3 2003
              Type: published
              Y: 2003
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              Value: 83
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