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Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient.

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Bibliographic Details
Title: Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient.
Authors: Spadafora, M., Privitera, G., Terrasi, A.
Source: Applied Physics Letters; November 3 2003, Vol. 83 Issue 18, p3713-3715, 3p
Database: Applied Science & Technology Source
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