Narrow, deep level cathodoluminescence emission from semi-insulating GaAs.
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| Title: | Narrow, deep level cathodoluminescence emission from semi-insulating GaAs. |
|---|---|
| Authors: | Radhakrishnan, J. K., Salviati, g |
| Source: | Applied Physics Letters; January 12 2004, Vol. 84 Issue 2, p197-199, 3p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 500945188 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500945188 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.1640471 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 197 Titles: – TitleFull: Narrow, deep level cathodoluminescence emission from semi-insulating GaAs. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Radhakrishnan, J. K. – PersonEntity: Name: NameFull: Salviati, g IsPartOfRelationships: – BibEntity: Dates: – D: 12 M: 01 Text: January 12 2004 Type: published Y: 2004 Identifiers: – Type: issn-print Value: 00036951 Numbering: – Type: volume Value: 84 – Type: issue Value: 2 Titles: – TitleFull: Applied Physics Letters Type: main |
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