APA (7th ed.) Citation

Prégaldiny, F., Lallement, C., & Mathiot, D. (2002). A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs. Solid-State Electronics, 46(12), 2191. https://doi.org/10.1016/S0038-1101(02)00248-4

Chicago Style (17th ed.) Citation

Prégaldiny, Fabien, Christophe Lallement, and Daniel Mathiot. "A Simple Efficient Model of Parasitic Capacitances of Deep-submicron LDD MOSFETs." Solid-State Electronics 46, no. 12 (2002): 2191. https://doi.org/10.1016/S0038-1101(02)00248-4.

MLA (9th ed.) Citation

Prégaldiny, Fabien, et al. "A Simple Efficient Model of Parasitic Capacitances of Deep-submicron LDD MOSFETs." Solid-State Electronics, vol. 46, no. 12, 2002, p. 2191, https://doi.org/10.1016/S0038-1101(02)00248-4.