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A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs.

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Bibliographic Details
Title: A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs.
Authors: Prégaldiny, Fabien, Lallement, Christophe, Mathiot, Daniel
Source: Solid-State Electronics; December 2002, Vol. 46 Issue 12, p2191-2198, 8p
Database: Applied Science & Technology Source
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